to-92 plastic-encapsulate transistors MJE13001 transistor (npn) feature power switching applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector -base voltage 600 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current -continuous 0.2 a p c collector power dissipation 0.75 w t j junction temperature 150 t stg storage temperature -55 ~ 150 electrical characteristics (ta =25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a , i e =0 600 v collector-emitter breakdown voltage v (br)ceo i c = 1ma , i b =0 400 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 7 v collector cut-off current i cbo v cb = 600v , i e =0 100 a collector cut-off current i ceo v ce = 400v, i b =0 200 a emitter cut-off current i ebo v eb =7v, i c =0 100 a h fe(1) v ce = 20v, i c = 20ma 10 40 dc current gain h fe(2) v ce = 10v, i c = 0.25 ma 5 collector-emitter saturation voltage v ce(sat) i c = 50ma, i b = 10 ma 0.5 v base-emitter saturation voltage v be(sat) i c = 50 ma, i b = 10ma 1.2 v transition frequency f t v ce = 20v, i c =20ma f = 1mhz 8 mhz fall time t f 0.3 s storage time t s i c =50ma, b1 =-i b2 =5ma, v cc =45v 1.5 s classification of h fe (1) range 10-13 13-16 16-19 19-22 22-25 25-28 28-31 31-34 34-37 37-40 to-92 1. base 2. collector 3. emitter a,dec,2010 tiger electronic co.,ltd
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